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Monocrystalline Silicon & Sapphire Technology
        
   

Crystal growth is a major stage of a crystallization process, which typically follows an initial stage of either homogeneous or heterogeneous (surface catalyzed) nucleation.

Crystal growth is a significant step for the semiconductor industry as well as for optical applications and solar industries. Sapphire single crystals are used for high power laser optics, high pressure components and substrates for LEDs. Aluminum Nitride(AlN) single crystals are the principal components for fabricating UV-LEDs and laser diodes (LDs).

Our Products——                                                                                                                                      

  • Mo Crucibles——for single crystal growing application

completely seamless Mo Crucible with thin wall 1.5~3mm

  • Tungsten Crucibles & Heating shields——for LED Sapphire single crystal growing application   

 

Tungsten crucibles is most important key parts in LED sapphire single crystal growth ways which are always used in application for your high temperature melting furnace.

We can produce many varieties of tungsten and molybdenum crucibles for single crystal growing process as a high temperature durability container in this application with its best properties. 

²        W crucibles 

²        Mo crucibles 

²        Customized crucibles

²        Lids

²        Dies

²        Heating shields 

 

 
   

1Physical and chemical properties

(1) Density: 18.3~19.2g /cm3

(2) Surface roughness: < 3.2μm

(3) Purity:W99.97%(min.)

(4) Application temperature environment:1800~2750℃。 

2Specifications

1Dimensions and tolerances Unitmm

Delivery condition

Specification

Tolerance

Thickness

Roughness   (μm)

Diameter

Height

Diameter

Height

Sintering

10~500

10~750

±3.0

±3.0

8~20

 

Final Finished

10~450

10~550

±0.5

±1.0

7~18

<3.2

Special sizes can be manufactured based on customers' requirements 

3Manufacturing process and equipment

Item

Process

Equipment

Quality Check

1

Powder purified

Purified furnace

GDMS

2

Isostatic pressing

Isostatic pressing machine

  Measurement of rough-processed

3

IF forging

High-accuracy forging machine

 Dimension measurements for product

4

IF sintering

High temperature vacuum sintering furnace

 Dimension measurements for product

5

Final machining

High-accuracy turning machine

Surface quality/ roughness and density

6

Package

 

Quality Test Report

 4Applications

Tungsten has a unique property of which it's melting point can reach 3410℃, tungsten crucible is widely applied in high temperature vacuum furnace melting environment such as sapphire growing furnace, quartz glass melting furnace, and special ceramic sintering furnace. The working temperature of tungsten crucible is above 2000℃. For sapphire crystal growing furnace, tungsten crucible with the specification of high-purity, high-density, no crack, exact dimension measurement and smooth surface and low-carbon, low-oxygen, low-iron so on has decisive influence on the success of crystal growth, quality control of pulling crystal, discharging and service life during sapphire growing process.

 

     

            

                                         Mo Wire/Coil                                     Mo Wire package

  • Mo shielding Sheets ——for PolySilicon growing furnace application

   

                 

                                                                  Mo shielding Sheets

Whether your high temperature, high purity requirements are conventional or exotic, XGM  has the better solutions for you.

 

Advantage of XGM Monocrystalline Silicon & Sapphire growing application parts:

- long term stock for your ready choice     

- smoothed forged and chemically cleaned surface with quality     

- uniform grain with densified microstructure ensures longer lifetime

- ready for use parts with precise machining tolerance.

 

 

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